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Silicon N-Channel Power MOSFET CRTD700N10S-V-G
General Description：
CRTD700N10S-V-G the silicon N-channel Enhanced VDSS
100
VDMOSFETs, is obtained by the high density Trench technology ID
17
which reduce the conduction loss, improve switching PD
56.8
RDS(ON)
52
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the Halogen Free standard.
Features：
Fast Switching
Low ON Resistance (Rdson≤65mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Halogen Free and Lead Free
Applications：
Power switch circuit of adaptor and charger.
CRTD700N10S-V-G Datasheet
