Datasheet Details
| Part number | CRTD700N10S-V-G |
|---|---|
| Manufacturer | CR Micro |
| File Size | 1.17 MB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet | CRTD700N10S-V-G-CRMicro.pdf |
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Overview: Silicon N-Channel Power MOSFET CRTD700N10S-V-G General.
| Part number | CRTD700N10S-V-G |
|---|---|
| Manufacturer | CR Micro |
| File Size | 1.17 MB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet | CRTD700N10S-V-G-CRMicro.pdf |
|
|
|
： CRTD700N10S-V-G the silicon N-channel Enhanced VDSS 100 VDMOSFETs, is obtained by the high density Trench technology ID 17 which reduce the conduction loss, improve switching PD 56.8 RDS(ON) 52 performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-252, which accords with the Halogen Free standard.
Compare CRTD700N10S-V-G distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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