CRTD700N10S-V-G Overview
： CRTD700N10S-V-G the silicon N-channel Enhanced VDSS 100 VDMOSFETs, is obtained by the high density Trench technology ID 17 which reduce the conduction loss, improve switching PD 56.8 RDS(ON) 52 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the Halogen Free...
CRTD700N10S-V-G Key Features
- Fast Switching
- Low ON Resistance (Rdson≤65mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
- Halogen Free and Lead Free