CRTD700N10S-V-G
CRTD700N10S-V-G is Silicon N-Channel Power MOSFET manufactured by CR Micro.
Silicon N-Channel Power MOSFET CRTD700N10S-V-G
General Description:
CRTD700N10S-V-G the silicon N-channel Enhanced VDSS
VDMOSFETs, is obtained by the high density Trench technology ID
17 which reduce the conduction loss, improve switching PD
RDS(ON)
52 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the Halogen Free standard.
Features
:
- Fast Switching
- Low ON Resistance (Rdson≤65mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
- Halogen Free and Lead...