CRTK032N03L2P Description
： CRTK032N03L2P the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS 30 V ID（Silicon limited current） 90 A ID（Package limited current） 50 A PD 48 W RDS(ON)Typ 2.5 mΩ suitable for use as a load switch and PWM applications. The package form is PDFN3.3 3.3, which...
CRTK032N03L2P Key Features
- Fast Switching
- Low ON Resistance(Rdson≤3.2mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
- Halogen Free