CRTM021N04L2-G Overview
： CRTM021N04L2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device can VDSS ID（Silicon limited current） ID（Package limited current） PD RDS(ON)Typ 40 230 60 178.5 1.65 V A A W mΩ be used in load switch and power switch applications. The package form is PDFN5 6, which...
CRTM021N04L2-G Key Features
- Fast Switching
- Low ON Resistance(Rdson≤2.1mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
- Halogen Free