CRTM024N03L2-G Datasheet | CR Micro

Silicon N-Channel Power MOSFET CRTM024N03L2-G General Description： CRTM024N03L2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device can VDSS ID（Silicon limited current） ID（Package limited current） PD RDS(ON)Typ 30 170 60 104.1 1.7 V A A W mΩ be used in load switch and power switch applications. The package form is PDFN5- 6, which accords with the RoHS standard. Features ： - Fast Switching - Low ON Resistance(Rdson≤2.2mΩ) - Low Gate Charge - Low Reverse transfer capacitances - 100% Single Pulse avalanche energy Test - Halogen...