CRTM028N03L2P Datasheet | CR Micro

Silicon N-Channel Power MOSFET CRTM028N03L2P General Description： CRTM028N03L2P the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID（Silicon limited current） ID（Package limited current） PD RDS(ON)Typ 30 105 60 59.5 2.5 V A A W mΩ suitable for use as a load switch and PWM applications. The package form is PDFN5- 6, which accords with the RoHS standard. Features ： - Fast Switching - Low ON Resistance(Rdson≤3.0mΩ) - Low Gate Charge - Low Reverse transfer capacitances - 100% Single Pulse avalanche energy Test - Halogen...