CRTM028N03L2P Description
： CRTM028N03L2P the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID（Silicon limited current） ID（Package limited current） PD RDS(ON)Typ 30 105 60 59.5 2.5 V A A W mΩ suitable for use as a load switch and PWM applications. The package form is PDFN5 6, which...
CRTM028N03L2P Key Features
- Fast Switching
- Low ON Resistance(Rdson≤3.0mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
- Halogen Free