CRTM045N03L2P Overview
： CRTM045N03L2P the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS 30 V ID（Silicon limited current） 85 A ID（Package limited current） 60 A PD 52 W RDS(ON)Typ 3.4 mΩ suitable for use as a load switch and PWM applications. The package form is PDFN5 6, which...
CRTM045N03L2P Key Features
- Fast Switching
- Low ON Resistance(Rdson≤4.5mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
- Halogen Free