CRXQ160M120G1 Overview
Max CRXQ160M120G1 SiC MOSFET 1200V, 160mΩ, 18A Symbol RthJC RthJA Value 1.21 40 Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol min.
CRXQ160M120G1 Key Features
- High Blocking Voltage with Low On-Resistance
- High Speed Switching with Low Capacitances
- Easy to Parallel and Simple to Drive
- Avalanche Ruggedness
- Fast Reverse Recovery
- Halogen Free, RoHS pliant