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CRXQ160M120G1 - 1200V SiC MOSFET

Datasheet Summary

Features

  • High Blocking Voltage with Low On-Resistance.
  • High Speed Switching with Low Capacitances.
  • Easy to Parallel and Simple to Drive.
  • Avalanche Ruggedness.
  • Fast Reverse Recovery.
  • Halogen Free, RoHS Compliant.

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Datasheet preview – CRXQ160M120G1

Datasheet Details

Part number CRXQ160M120G1
Manufacturer CR Micro
File Size 1.20 MB
Description 1200V SiC MOSFET
Datasheet download datasheet CRXQ160M120G1 Datasheet
Additional preview pages of the CRXQ160M120G1 datasheet.

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Full PDF Text Transcription

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Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Fast Reverse Recovery • Halogen Free, RoHS Compliant Applications • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC Converters • EV Charger CRXQ160M120G1 SiC MOSFET 1200V, 160mΩ, 18A Product Summary VDS RDS(on)_typ ID 1200V 160mΩ 18A 100% Avalanche Tested Package Marking and Ordering Information Part # CRXQ160M120G1 Marking - Package TO-247 Packing Tube Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current VGS=20V，TC = 25°C VGS=20V，TC = 100°C Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=10mH, Rg=25Ω) Gate-Source voltage (dynamic) G
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