CRXQ40M120G1 Description
Max CRXQ40M120G1 SiC MOSFET 1200V, 40mΩ, 55A Symbol RthJC RthJA Value 0.47 40 Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol min.
CRXQ40M120G1 Key Features
- High Blocking Voltage with Low On-Resistance
- High Speed Switching with Low Capacitances
- Easy to Parallel and Simple to Drive
- Avalanche Ruggedness
- Fast Reverse Recovery
- Halogen Free, RoHS pliant