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CRXQC40M120G2Z - SiC MOSFET

Key Features

  • CRM G2 SIC MOSFET Technology.
  • High Blocking Voltage with Low On-Resistance.
  • High Speed Switching with Low Capacitances.
  • Avalanche Ruggedness.
  • Fast Reverse Recovery.

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Datasheet Details

Part number CRXQC40M120G2Z
Manufacturer CR Micro
File Size 1.23 MB
Description SiC MOSFET
Datasheet download datasheet CRXQC40M120G2Z Datasheet

Full PDF Text Transcription for CRXQC40M120G2Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CRXQC40M120G2Z. For precise diagrams, and layout, please refer to the original PDF.

Features • CRM G2 SIC MOSFET Technology • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Avalanche Ruggedness • Fast Reverse ...

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Switching with Low Capacitances • Avalanche Ruggedness • Fast Reverse Recovery Applications • Solar Inverters • High Voltage DC/DC Converters • On Board Charger(OBC) • EV Charger CRXQC40M120G2Z SiC MOSFET 1200V, 40mΩ, 66A Product Summary VDS RDS(on)_typ ID 1200V 40mΩ 66A 100% Avalanche Tested Package Marking and Ordering Information Part # CRXQC40M120G2Z Marking CRXQC40M120G2Z Package TO-247-4C Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current VGS=15V，TC = 25°C VGS=15V，TC = 100°C Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=10mH, Rg=25Ω) Gate-Source

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