CRXQC40M120G2Z Description
When using MOSFET Body Diode VGSmax = -5V/+22V a2: MOSFET can also safely operate at 0/+18 V ©China Resources Microelectronics Limited Page 1 Parameter , junction case. Max CRXQC40M120G2Z SiC MOSFET 1200V, 40mΩ, 66A Symbol RthJC RthJA Value 0.62 40 Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol min.
CRXQC40M120G2Z Key Features
- CRM G2 SIC MOSFET Technology
- High Blocking Voltage with Low On-Resistance
- High Speed Switching with Low Capacitances
- Avalanche Ruggedness
- Fast Reverse Recovery