CS01N100A4R Overview
： CS01N100 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
CS01N100A4R Key Features
- Fast Switching
- Low ON Resistance(Rdson≤110Ω)
- Low Gate Charge (Typical Data:8nC)
- Low Reverse transfer capacitances(Typical:2.67pF)
- 100% Single Pulse avalanche energy Test