CS01N100A4R Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS01N100 A4R General Description： CS01N100 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features ： - Fast Switching - Low ON Resistance(Rdson≤110Ω) - Low Gate Charge (Typical Data:8nC) - Low Reverse transfer capacitances(Typical:2.67pF) - 100% Single Pulse avalanche energy Test Applications： Po...