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CS01N60ASRD-G - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤500Ω) l Low Gate Charge (Typical Data:3.1nC) l Low Reverse transfer capacitances(Typical:1.3pF) l Halogen Free.

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Datasheet Details

Part number CS01N60ASRD-G
Manufacturer CR Micro
File Size 455.23 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS01N60ASRD-G Datasheet

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Full PDF Text Transcription (Reference)

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Silicon N-Channel Power MOSFET ○R CS01N60 ASRD-G General Description： VDSS 600 V CS01N60 ASRD-G, the silicon N-channel Enhanced ID 0.04 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TA=25℃) 0.5 W which reduce the conduction loss, improve switching RDS(ON)Typ 160 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-23, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤500Ω) l Low Gate Charge (Typical Data:3.1nC) l Low Reverse transfer capacitances(Typical:1.3pF) l Halogen Free Applications： TV power.