CS01N60ASRD-G Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS01N60 ASRD-G General Description： VDSS CS01N60 ASRD-G, the silicon N-channel Enhanced ID VDMOSFETs, is obtained by the self-aligned planar Technology PD(TA=25℃) W which reduce the conduction loss, improve switching RDS(ON)Typ Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-23, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤500Ω) l Low Gate Charge (Typical Data:3.1nC) l Low Reverse transfer capacitances(Typical:1.3pF) l Halogen...