CS01N60ASRD-G Description
： VDSS 600 V CS01N60 ASRD-G, the silicon N-channel Enhanced ID 0.04 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TA=25℃) 0.5 W which reduce the conduction loss, improve switching RDS(ON)Typ 160 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-23, which accords...