Datasheet4U Logo Datasheet4U.com

CS105N08A8 - Silicon N-Channel Power MOSFET

General Description

CS105N08 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤8.0mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

📥 Download Datasheet

Datasheet Details

Part number CS105N08A8
Manufacturer CR Micro
File Size 493.84 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS105N08A8 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CS1050BL CURRENT SENSOR CUI
CS1050L Current Sensors Coilcraft
CS10-12.000MABJTR Surface Mount Crystals Citizen
CS10-12.288MABJTR Surface Mount Crystals Citizen
CS10-12.500MABJTR Surface Mount Crystals Citizen

Other Datasheets by CR Micro

Part Number Description
CS105N08B8 Silicon N-Channel Power MOSFET
CS105N15A0 Silicon N-Channel Power MOSFET
CS105N15A8 Silicon N-Channel Power MOSFET
CS100N03A4-G Silicon N-Channel Power MOSFET
CS100N03B4-1 Silicon N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon N-Channel Power MOSFET ○R CS105N08 A8 General Description： CS105N08 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤8.0mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ 80 V 105 A 60 A 138 W 6.