CS105N15A0 Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS105N15 A0 General Description： CS105N15 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the RoHS standard. Features ： VDSS ID PD(TC=25℃) RDS(ON)Typ 150 V 105 A 312.5 W 9.8 mΩ l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances(Typical:220.2pF) l 100% Single Pulse avalanche energy Test Applications： Power switch...