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CS10N045AE-G - Silicon N-Channel Power MOSFET

General Description

CS10N045 AE-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • Fast Switching.
  • Low ON Resistance.
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test.
  • Halogen Free.

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Datasheet Details

Part number CS10N045AE-G
Manufacturer CR Micro
File Size 536.21 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS10N045AE-G Datasheet

Full PDF Text Transcription (Reference)

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Silicon N-Channel Power MOSFET ○R CS10N045 AE-G General Description: CS10N045 AE-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOP8, which accords with the Halogen Free standard. Features:  Fast Switching  Low ON Resistance  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test  Halogen Free Applications: Power switch circuit of adaptor and charger.