CR Micro CS10N15A3
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard..| Part No. | CS10N15A3 |
|---|---|
| Datasheet | CS10N15A3 Download |
| Manufacturer |  CR Micro |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
： CS10N15 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.FEATURES
：● Fast Switching
● Low ON Resistance(Rdson≤300mΩ)
● Low Gate Charge
● Low Reverse transfer capacitances
● 100% Single Pulse avalanche energy Test
APPLICATIONS
： Power switch circuit of adaptor and charger. VDSS ID PD RDS(ON)Typ 150 V 10 A 36.7 W 230 mΩ Absolute（TC= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 IAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Avalanche Energy ,Repetitive Avalanche Current Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range MaximumTemperature for Soldering Rating 150 10 6.0 40 ±20 17.4 5.9 36.7 0.294 150，–55 to 150 300 Units V A A A V mJ A W W/℃ ℃ ℃ WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
