CS10N15A3 - Silicon N-Channel Power MOSFET

CR Micro

General Description

CS10N15 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤300mΩ).
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.

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CS10N15A3 silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CS10N15A3
Manufacturer	CR Micro
File Size	554.14 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS10N15A3 Datasheet

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Silicon N-Channel Power MOSFET ○R CS10N15 A3 General Description： CS10N15 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.. Features：  Fast Switching  Low ON Resistance(Rdson≤300mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. VDSS ID PD RDS(ON)Typ 150 V 10 A 36.