CS110N06A8-2 - Silicon N-Channel Power MOSFET

CR Micro

General Description

CS110N06 A8-2, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤8 mΩ).
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.

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CS110N06A8-2 silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CS110N06A8-2
Manufacturer	CR Micro
File Size	1.20 MB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS110N06A8-2 Datasheet

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Silicon N-Channel Power MOSFET ○R CS110N06 A8-2 General Description： CS110N06 A8-2, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤8 mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 60 V 110 A 60 A 135.