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CS120N06C8 - Silicon N-Channel Power MOSFET

General Description

CS120N06 C8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤6.5mΩ) l Low Gate Charge l Low Reverse transfer capacitances(Typical:217pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS120N06C8
Manufacturer CR Micro
File Size 373.79 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS120N06C8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS120N06 C8 General Description： CS120N06 C8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) RDS(ON)Typ 60 120 80 156 5.4 V A A W mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤6.5mΩ) l Low Gate Charge l Low Reverse transfer capacitances(Typical:217pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.