CS120N06C8 Overview
Description
： CS120N06 C8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) RDS(ON)Typ 60 120 80 156 5.4 V A A W mΩ can be used in various power switching circuit for system miniaturization and higher efficiency.
