CS120N08A0 Overview
Description
： CS120N08 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤7.5mΩ)
- Low Gate Charge (Typical Data:74.4nC)
- Low Reverse transfer capacitances(Typical:253pF)
- 100% Single Pulse avalanche energy Test
