CS12N05AEP-G Description
： VDSS 45 V CS12N05 AEP-G,the silicon N-channel Enhanced VDMOSFETs, is ID 12 A obtained by advanced trench Technology which reduce the PD(TC=25℃) 3.1 W conduction loss, improve switching performance and RDS(ON)Typ (VGS=10V) 11 mΩ enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOP-8, which accords with...
CS12N05AEP-G Key Features
- Fast Switching
- Low ON Resistance (Rdson≤15mΩ)
- Low Reverse transfer capacitances(Typical:115pF)
- 100% Single Pulse avalanche energy Test
- Halogen free