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Silicon N-Channel Trench MOSFET
○R
CS12N05 AEP-G
General Description：
VDSS
45
V
CS12N05 AEP-G,the silicon N-channel Enhanced VDMOSFETs, is
ID
12
A
obtained by advanced trench Technology which reduce the
PD(TC=25℃)
3.1
W
conduction loss, improve switching performance and
RDS(ON)Typ (VGS=10V)
11
mΩ
enhance the avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and higher
efficiency. The package form is SOP-8, which accords with the
RoHS standard.
Features：
Fast Switching
Low ON Resistance (Rdson≤15mΩ)
Low Reverse transfer capacitances(Typical:115pF)
100% Single Pulse avalanche energy Test
Halogen free
Applications：
Power switch circuit of adaptor and charger.
CS12N05AEP-G Datasheet
