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Silicon N-Channel Power MOSFET
○R
CS12N80F A9RD
General Description：
VDSS
800
V
CS12N80F A9RD, the silicon N-channel Enhanced ID
12
A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
41
W
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.75
Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-220F,
which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications：
LED power supply and charger.
CS12N80FA9RD Datasheet
