CS12N80FA9RD Description
： VDSS 800 V CS12N80F A9RD, the silicon N-channel Enhanced ID 12 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 41 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.75 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords...
CS12N80FA9RD Key Features
- Fast Switching
- Low ON Resistance
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test