CS130N03A3 Overview
Description
： VDSS 30 V CS130N03 A3, the silicon N-channel Enhanced ID（Silicon limited current） 130 A VDMOSFETs, is obtained by advanced Trench Technology ID（Package limited current） 60 A which reduce the conduction loss, improve switching PD(TC=25℃) 83 W performance and enhance the avalanche energy. The transistor RDS(ON)Typ 1.9 mΩ can be used in various power switching circuit for system miniaturization and higher efficiency.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤2.5mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances(Typical:482pF)
- 100% Single Pulse avalanche energy Test
