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CS130N03A3 - Silicon N-Channel Power MOSFET

General Description

VDSS 30 V CS130N03 A3, the silicon N-channel Enhanced ID(Silicon limited current) 130 A VDMOSFETs, is obtained by advanced Trench Technology ID(Package limited current) 60 A which reduce the conduction loss, improve switching PD(TC=25℃) 83 W performance and enhance the avalanche ene

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤2.5mΩ).
  • Low Gate Charge.
  • Low Reverse transfer capacitances(Typical:482pF).
  • 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS130N03A3
Manufacturer CR Micro
File Size 646.12 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS130N03A3 Datasheet

Full PDF Text Transcription (Reference)

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Silicon N-Channel Power MOSFET ○R CS130N03 A3 General Description: VDSS 30 V CS130N03 A3, the silicon N-channel Enhanced ID(Silicon limited current) 130 A VDMOSFETs, is obtained by advanced Trench Technology ID(Package limited current) 60 A which reduce the conduction loss, improve switching PD(TC=25℃) 83 W performance and enhance the avalanche energy. The transistor RDS(ON)Typ 1.9 mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features:  Fast Switching  Low ON Resistance(Rdson≤2.