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Silicon N-Channel Power MOSFET
○R
CS130N03 A3
General Description:
VDSS
30
V
CS130N03 A3, the silicon N-channel Enhanced
ID(Silicon limited current)
130
A
VDMOSFETs, is obtained by advanced Trench Technology
ID(Package limited current)
60
A
which reduce the conduction loss, improve switching
PD(TC=25℃)
83
W
performance and enhance the avalanche energy. The transistor
RDS(ON)Typ
1.9 mΩ
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features:
Fast Switching Low ON Resistance(Rdson≤2.