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CS130N10A0 - Silicon N-Channel Power MOSFET

General Description

CS130N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤8.5 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ 100 V 130 A 120 A 266 W 6.7 mΩ.

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Datasheet Details

Part number CS130N10A0
Manufacturer CR Micro
File Size 535.64 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS130N10A0 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS130N10 A0 General Description： CS130N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-263, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤8.5 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ 100 V 130 A 120 A 266 W 6.7 mΩ Applications： Power switch circuit of adaptor, charger, inverter, electric vehicle and charging pile.