CS130N10A8 Description
： CS130N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ package form is TO-220AB, which accords with the RoHS standard.