CS130N10A8
CS130N10A8 is manufactured by Huajing Microelectronics.
Silicon N-Channel Power MOSFET
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CS130N10 A8
General Description：
CS130N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The
VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ package form is TO-220AB, which accords with the RoHS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤8.5 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor, charger,...
