CS13N03AE Datasheet PDF

CR Micro CS13N03AE

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOP8 which accords with the RoHS standard.

Part No.	CS13N03AE
Datasheet	CS13N03AE Download
Manufacturer	CR Micro
Description	Silicon N-Channel Power MOSFET
Buy	Stock & Price

GENERAL DESCRIPTION

： CS13N03 AE, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

FEATURES

： VDSS ID RDS(ON)Typ 30 V 13 A 8.3 mΩ l Fast Switching l Low ON Resistance(Rdson≤10mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test

APPLICATIONS

： Power switch circuit of adaptor and charger. Absolute（Ta= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 PD VGS EAS a2 TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Ta = 100 °C Pulsed Drain Current Power Dissipation Gate-to-Source Voltage Single Pulse Avalanche Energy Operating Junction and Storage Temperature Range Rating 30 13 8.4 52 2.5 ±20 64.8 150，–55 to 150 Units V A A A W V mJ ℃ WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 20V0 1 CS13N03 AE

ELECTRICAL CHARACTERISTICS

（Tj= 25℃ unle...