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CS13N03AE - Silicon N-Channel Power MOSFET

General Description

CS13N03 AE, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • VDSS ID RDS(ON)Typ 30 V 13 A 8.3 mΩ l Fast Switching l Low ON Resistance(Rdson≤10mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS13N03AE
Manufacturer CR Micro
File Size 397.86 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS13N03AE Datasheet

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Silicon N-Channel Power MOSFET ○R CS13N03 AE General Description： CS13N03 AE, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOP8 which accords with the RoHS standard. Features： VDSS ID RDS(ON)Typ 30 V 13 A 8.3 mΩ l Fast Switching l Low ON Resistance(Rdson≤10mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.