CS13N10AQ3-G - Silicon N-Channel Power MOSFET

CR Micro

General Description

CS13N10 AQ3-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤68 mΩ).
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.
Halogen Free.

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CS13N10AQ3-G silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CS13N10AQ3-G
Manufacturer	CR Micro
File Size	881.25 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS13N10AQ3-G Datasheet

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Full PDF Text Transcription (Reference)

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Silicon N-Channel Power MOSFET ○R CS13N10 AQ3-G General Description： CS13N10 AQ3-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is PDFN5×6, which accords with the Halogen Free standard. Features：  Fast Switching  Low ON Resistance(Rdson≤68 mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test  Halogen Free Applications： Power switch circuit of adaptor and charger.