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CS140N08AR - Silicon N-Channel Power MOSFET

General Description

CS140N08 AR, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:87.5nC) l Low Reverse transfer capacitances(Typical:291pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS140N08AR
Manufacturer CR Micro
File Size 942.92 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS140N08AR Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS140N08 AR General Description： CS140N08 AR, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) RDS(ON)Typ 85 140 120 208 4.8 V A A W mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-262, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:87.