CS140N08AR Datasheet PDF

CR Micro CS140N08AR

The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) RDS(ON)Typ 85 140 120 208 4.8 V A A W mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-262, which accords with the RoHS standard.

Part No.	CS140N08AR
Datasheet	CS140N08AR Download
Manufacturer	CR Micro
Description	Silicon N-Channel Power MOSFET
Buy	Stock & Price

GENERAL DESCRIPTION

： CS140N08 AR, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

FEATURES

： l Fast Switching l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:87.5nC) l Low Reverse transfer capacitances(Typical:291pF) l 100% Single Pulse avalanche energy Test

APPLICATIONS

： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C（Silicon limited ） Continuous Drain Current TC = 25 °C（Package limited） Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Rating 85 140 120 88 480 ±20 696 208 1.66 150，–55 to 150 300 Units V A A A A V mJ W W/℃ ℃ ℃ WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD.