Datasheet4U Logo Datasheet4U.com

CS14N06AQ2-1 - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

suitable for use as a load switch and PWM applications..

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤45mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

📥 Download Datasheet

Datasheet Details

Part number CS14N06AQ2-1
Manufacturer CR Micro
File Size 451.90 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS14N06AQ2-1 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CS14N10A3 Silicon N-Channel Power MOSFET Huajing Microelectronics
CS14-E2GA392MYNS Disk Ceramic Capacitors TDK
CS140 High-Current Relays Coto
CS1404A8 Silicon N-Channel Power MOSFET Huajing Microelectronics
CS142 Phase Control Thyristor IXYS Corporation

Other Datasheets by CR Micro

Part Number Description
CS14N10A4 Silicon N-Channel Power MOSFET
CS14N25A0R Silicon N-Channel Power MOSFET
CS14N25A4R Silicon N-Channel Power MOSFET
CS14N25A8R Silicon N-Channel Power MOSFET
CS14N25FA9R Silicon N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon N-Channel Power MOSFET ○R CS14N06 AQ2-1 General Description： CS14N06 AQ2-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications.. The package form is DFN3×3-8L, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤45mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.