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CS15N04AEP-G - Silicon N-Channel Trench MOSFET

General Description

CS15N04 AEP-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance (Rdson≤13mΩ) l Low Reverse transfer capacitances(Typical:115pF) l 100% Single Pulse avalanche energy Test l Halogen free 40 V 15 A 3.1 W 8 mΩ.

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Datasheet Details

Part number CS15N04AEP-G
Manufacturer CR Micro
File Size 454.37 KB
Description Silicon N-Channel Trench MOSFET
Datasheet download datasheet CS15N04AEP-G Datasheet

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Silicon N-Channel Trench MOSFET ○R CS15N04 AEP-G General Description： CS15N04 AEP-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOP-8, which accords with the RoHS standard. CS15N04AEP-G is halogen free. VDSS ID PD(TC=25℃) RDS(ON)T yp （ 1 0V） Features： l Fast Switching l Low ON Resistance (Rdson≤13mΩ) l Low Reverse transfer capacitances(Typical:115pF) l 100% Single Pulse avalanche energy Test l Halogen free 40 V 15 A 3.1 W 8 mΩ Applications： Power switch circuit of adaptor and charger.