| Part number | CS16N06AE-G |
|---|---|
| Datasheet | CS16N06AE-G-CRMicro.pdf |
| File Size | 1.26 MB |
| Manufacturer | CR Micro |
| Description | Silicon N-Channel Power MOSFET |
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： CS16N06 AE-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOP8, which accords with the RoHS standard.
| Part Number | Description |
|---|---|
| CS16N65FA9H | Silicon N-Channel Power MOSFET |
| CS16N65FA9R-G | Silicon N-Channel Power MOSFET |
| CS100N03A4-G | Silicon N-Channel Power MOSFET |
| CS100N03B4-1 | Silicon N-Channel Power MOSFET |
| CS100N03B8-1 | Silicon N-Channel Power MOSFET |
| CS100N06A3 | Silicon N-Channel Power MOSFET |
| CS100N06A4 | Silicon N-Channel Power MOSFET |
| CS100N06A8 | Silicon N-Channel Power MOSFET |
| CS100N06D3 | Silicon N-Channel Power MOSFET |
| CS100N06D3-G | Silicon N-Channel Power Trench MOSFET |
