CS16N06AE-G Datasheet | CR Micro

Silicon N-Channel Power Trench MOSFET ○R CS16N06 AE-G General Description： CS16N06 AE-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOP8, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance (Rdson≤10mΩ) l Low Gate Charge (Typical Data: 88.8nC) l Low Reverse transfer capacitances(Typical:220pF) l 100% Single Pulse avalanche energy Test l Halogen free Applications： Power...