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Silicon N-Channel Power Trench MOSFET
○R
CS16N06 AE-G
General Description：
CS16N06 AE-G the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
SOP8, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance (Rdson≤10mΩ) l Low Gate Charge (Typical Data: 88.8nC) l Low Reverse transfer capacitances(Typical:220pF) l 100% Single Pulse avalanche energy Test l Halogen free
Applications：
Power switch circuit of adaptor and charger.
CS16N06AE-G Datasheet
