CS17N10A4-G datasheet by CR Micro.
| Part number | CS17N10A4-G |
|---|---|
| Datasheet | CS17N10A4-G-CRMicro.pdf |
| File Size | 507.34 KB |
| Manufacturer | CR Micro |
| Description | Silicon N-Channel Power MOSFET |
|
|
： CS17N10 A4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard.
| Part Number | Description |
|---|---|
| CS17N10A4 | Silicon N-Channel Power MOSFET |
| CS17N10A3 | Silicon N-Channel Power MOSFET |
| CS100N03A4-G | Silicon N-Channel Power MOSFET |
| CS100N03B4-1 | Silicon N-Channel Power MOSFET |
| CS100N03B8-1 | Silicon N-Channel Power MOSFET |
| CS100N06A3 | Silicon N-Channel Power MOSFET |
| CS100N06A4 | Silicon N-Channel Power MOSFET |
| CS100N06A8 | Silicon N-Channel Power MOSFET |
| CS100N06D3 | Silicon N-Channel Power MOSFET |
| CS100N06D3-G | Silicon N-Channel Power Trench MOSFET |
