Datasheet4U Logo Datasheet4U.com

CS180N08A8 - Silicon N-Channel Power MOSFET

General Description

CS180N08 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤3.3mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

📥 Download Datasheet

Datasheet Details

Part number CS180N08A8
Manufacturer CR Micro
File Size 611.45 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS180N08A8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon N-Channel Power MOSFET ○R CS180N08 A8 General Description: CS180N08 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(Rdson≤3.3mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. VDSS ID(Silicon limited current) ID(Package limited) RDS(ON)Typ 80 V 180 A 120 A 2.