CS19N10A0 Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS19N10 A0 General Description： CS19N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-263, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤67 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test 100 V 19 A 56.8 W 53 mΩ Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃...