CS19N40A8R Description
： VDSS 400 V CS19N40 A8R, the silicon N-channel Enhanced ID 19 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 150 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.23 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords...