Datasheet Summary
Silicon N-Channel Power MOSFET
○R
CS19N40 A8R
General Description:
VDSS
CS19N40 A8R, the silicon N-channel Enhanced ID
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃)
W which reduce the conduction loss, improve switching
RDS(ON)Typ
Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard..
Features
: l Fast Switching l Low ON Resistance(Rdson≤0.30Ω) l Low Gate Charge (Typical Data:42nC) l Low Reverse transfer capacitances(Typical:12.3pF) l 100% Single Pulse...