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CS19N40FA9R - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤0.30Ω) l Low Gate Charge (Typical Data:42nC) l Low Reverse transfer capacitances(Typical:12.3pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS19N40FA9R
Manufacturer CR Micro
File Size 392.66 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS19N40FA9R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS19N40F A9R General Description： VDSS 400 V CS19N40F A9R, the silicon N-channel Enhanced ID 19 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 33 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.23 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤0.30Ω) l Low Gate Charge (Typical Data:42nC) l Low Reverse transfer capacitances(Typical:12.3pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor.