CS21N06A4 Overview
Description
： VDSS 60 CS21N06 A4, the silicon N-channel Enhanced ID 21 VDMOSFETs, is obtained by the high density Trench PD 31 technology which reduce the conduction loss, improve switching RDS(ON)Typ 33 performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications.
