GENERAL DESCRIPTION
： CS240N06 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. FEATURES
： l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances(Typical:504pF) l 100% Single Pulse avalanche energy Test APPLICATIONS
： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current TC = 25 °C（Silicon limited） Continuous Drain Current TC = 25 °C（Package a1 limited） Continuous Drain Current TC = 100 °C（ P a c k a g e a1 limited） Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Derating Factor above 25°C Operating Junction and Storage Temperature Range Rating 60 240 120 120 480 ±20 1089 297.6 2.38 150，–55 to 150 Units V A A A A V mJ W W/℃ ℃ WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD.
CR Micro
