CS240N06A0 Description
： CS240N06 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) 60 240 120 297.6 RDS(ON)Typ 2.5 V A A W mΩ can be used in various power switching circuit for system miniaturization and higher...