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CS240N06A0 - Silicon N-Channel Power MOSFET

General Description

CS240N06 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

60 240 120 297.

Key Features

  • l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances(Typical:504pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS240N06A0
Manufacturer CR Micro
File Size 407.14 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS240N06A0 Datasheet

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Full PDF Text Transcription (Reference)

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Silicon N-Channel Power MOSFET ○R CS240N06 A0 General Description： CS240N06 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) 60 240 120 297.6 RDS(ON)Typ 2.5 V A A W mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances(Typical:504pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.