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CS24N04A4 - Silicon N-Channel Power MOSFET

Datasheet Summary

Description

CS24N04 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤19.5 mΩ).
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test.
  • Halogen Free.

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Datasheet preview – CS24N04A4

Datasheet Details

Part number CS24N04A4
Manufacturer CR Micro
File Size 839.41 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS24N04A4 Datasheet
Additional preview pages of the CS24N04A4 datasheet.

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Full PDF Text Transcription

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Silicon N-Channel Power MOSFET ○R CS24N04 A4 General Description： CS24N04 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤19.5 mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test  Halogen Free Applications： Power switch circuit of adaptor and charger. VDSS ID PD RDS(ON)Typ 40 V 24 A 24 W 15.
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