CS25N10A4 Description
： CS25N10 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard.
CS25N10A4 Key Features
- Fast Switching
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test