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CS25N10A4 - Silicon N-Channel Power MOSFET

Datasheet Summary

Description

CS25N10 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

Features

  • Fast Switching.
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS25N10A4
Manufacturer CR Micro
File Size 790.40 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS25N10A4 Datasheet
Additional preview pages of the CS25N10A4 datasheet.

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Full PDF Text Transcription

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Silicon N-Channel Power MOSFET CS25N10 A4 General Description： CS25N10 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard. VDSS ID PD RDS(ON)Typ ○R 100 V 25 A 56.8 W 29 mΩ Features：  Fast Switching  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
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