CS25N10A4
CS25N10A4 is Silicon N-Channel Power MOSFET manufactured by CR Micro.
Silicon N-Channel Power MOSFET CS25N10 A4
General Description：
CS25N10 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard.
VDSS ID PD RDS(ON)Typ
○R
100 V 25 A 56.8 W 29 mΩ
Features
：
- Fast Switching
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（TJ= 25℃ unless otherwise specified）
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