CS28N50ANR Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS28N50 ANR General Description： CS28N50 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the Ro HS standard. Features ： - Fast Switching - Low ON Resistance(Rdson≤195mΩ) - Low Gate Charge (Typical Data:83n C) - Low Reverse transfer capacitances - 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. 150 mΩ Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage IDMa1 VGS EAS a2 dv/dt a3 Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt PD TJ，Tstg Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range Rating 500 28 17.5 112 ±30 2205 5.0 312.5 2.5 150，- 55 to 150 Units V A A A V m J V/ns W W/℃...