CS28N50ANR Description
： CS28N50 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard.
CS28N50ANR Key Features
- Fast Switching
- Low ON Resistance(Rdson≤195mΩ)
- Low Gate Charge (Typical Data:83nC)
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test