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Silicon N-Channel Power MOSFET
○R
CS2N100 A3R
General Description：
CS2N100 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
1000 2
140 5.7
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data: 18.8nC) l Low Reverse transfer capacitances(Typical: 0.9pF) l 100% Single Pulse avalanche energy Test l Halogen Free
Applications：
Power switch circuit of adaptor and charger.
CS2N100A3R Datasheet
