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Silicon N-Channel Power MOSFET
○R
CS2N15 AE-1
General Description：
CS2N15 AE-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOP8, which accords with the RoHS standard..
Features：
Fast Switching Low ON Resistance(Rdson≤300mΩ) Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS2N15AE-1 Datasheet
