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Silicon N-Channel Power MOSFET
CS2N60 A23H
General Description：
CS2N60 A23H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TA=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is SOT-223,
which accords with the RoHS standard..
Features：
○R
600
V
2
A
3
W
3.6
Ω
Fast Switching
Low ON Resistance(Rdson≤4.5Ω)
Low Gate Charge (Typical Data:8.5nC)
Low Reverse transfer capacitances(Typical:5.4pF)
100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS2N60A23H Datasheet
