CS2N60A23H Overview
： CS2N60 A23H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TA=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-223, which accords with the RoHS standard..
CS2N60A23H Key Features
- Fast Switching
- Low ON Resistance(Rdson≤4.5Ω)
- Low Gate Charge (Typical Data:8.5nC)
- Low Reverse transfer capacitances(Typical:5.4pF)
- 100% Single Pulse avalanche energy Test