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Silicon N-Channel Power MOSFET
○R
CS2N60 B23HP
General Description：
VDSS
600
V
CS2N60 B23HP, the silicon N-channel Enhanced ID
1.5
A
VDMOSFETs, is obtained by the self-aligned planar
PD (TA=25℃)
4.5
W
Technology which reduce the conduction loss, improve
RDS(ON)Typ
7
Ω
switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form
is SOT-223, which accords with the RoHS standard..
Features：
l Fast Switching
l Low ON Resistance(Rdson≤8Ω) l Low Gate Charge (Typical Data: 9.4nC)
l Low Reverse transfer capacitances(Typical:16.2 pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS2N60B23HP Datasheet
