CS2N60B23HP Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS2N60 B23HP General Description： VDSS CS2N60 B23HP, the silicon N-channel Enhanced ID VDMOSFETs, is obtained by the self-aligned planar PD (TA=25℃) Technology which reduce the conduction loss, improve RDS(ON)Typ Ω switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-223, which accords with the RoHS standard.. Features ： l Fast Switching l Low ON Resistance(Rdson≤8Ω) l Low Gate Charge (Typical Data: 9.4nC) l Low Reverse transfer capacitances(Typical:16.2 pF) l 100% Single Pulse...