CS2N60B23HP Overview
: VDSS 600 V CS2N60 B23HP, the silicon N-channel Enhanced ID 1.5 A VDMOSFETs, is obtained by the self-aligned planar PD (TA=25℃) 4.5 W Technology which reduce the conduction loss, improve RDS(ON)Typ 7 Ω switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-223, which accords with...