CS31N03A4 Datasheet PDF - CR Micro Silicon N-Channel Power MOSFET Specs

CS31N03A4 - Silicon N-Channel Power MOSFET

Datasheet Summary

Description

CS31N03 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications..

Features

l Fast Switching l Low ON Resistance(Rdson≤17 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

Datasheet Details

Part number	CS31N03A4
Manufacturer	CR Micro
File Size	474.00 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS31N03A4 Datasheet
Additional preview pages of the CS31N03A4 datasheet.

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Full PDF Text Transcription

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Silicon N-Channel Power MOSFET ○R CS31N03 A4 General Description： CS31N03 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications.. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤17 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： VDSS ID PD (Tc= 25°C) RDS(ON)Typ 30 V 31 A 13.8 W 13 mΩ Power switch circuit of adaptor and charger.

Published: Dec 8, 2024 |