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CS31N03A4 - Silicon N-Channel Power MOSFET

General Description

CS31N03 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications..

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤17 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS31N03A4
Manufacturer CR Micro
File Size 474.00 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS31N03A4 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS31N03 A4 General Description： CS31N03 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications.. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤17 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： VDSS ID PD (Tc= 25°C) RDS(ON)Typ 30 V 31 A 13.8 W 13 mΩ Power switch circuit of adaptor and charger.