CR Micro CS35N04A3-G
This device is suitable for use as a load switch and PWM applications. The package form is TO-251, which accords with the RoHS standard.| Part No. | CS35N04A3-G |
|---|---|
| Datasheet | CS35N04A3-G Download |
| Manufacturer |  CR Micro |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
： CS35N04 A3-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.FEATURES
：● Fast Switching
● Low ON Resistance(Rdson≤14 mΩ)
● Low Gate Charge
● Low Reverse transfer capacitances
● 100% Single Pulse avalanche energy Test
● Halogen Free
APPLICATIONS
： Power switch circuit of adaptor and charger. VDSS ID PD RDS(ON)Typ 40 V 35 A 34.6 W 10.5 mΩ Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Avalanche Energy Power Dissipation TC = 25 °C Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Rating 40 35 23.3 140 ±20 62.4 34.6 0.277 150，–55 to 150 300 Units V A A A V mJ W W/℃ ℃ ℃ WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
