CS35N04A4-G - Silicon N-Channel Power MOSFET

Product Overview

Huajing Microelectronics

Datasheet Details

Part number	CS35N04A4-G
Manufacturer	Huajing Microelectronics
File Size	760.55 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS35N04A4-G Datasheet
Additional preview pages of the CS35N04A4-G datasheet.

Product details

Description

CS35N04 A4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

Features

Fast Switching.
Low ON Resistance(Rdson≤14 mΩ).
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.
Halogen Free.

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Published: Dec 8, 2024 |