CS35N04A4-G
CS35N04A4-G is Silicon N-Channel Power MOSFET manufactured by Huajing Microelectronics.
Silicon N-Channel Power MOSFET
○R
CS35N04 A4-G
General Description：
CS35N04 A4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard.
Features
：
- Fast Switching
- Low ON Resistance(Rdson≤14 mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
- Halogen Free
Applications：
Power switch circuit of adaptor and charger.
VDSS ID PD RDS(ON)Typ
40 V 35 A 34.6 W 10.5...
