CS35N10FA9 Overview
： CS35N10F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-220F, which accords with the RoHS standard.
CS35N10FA9 Key Features
- Fast Switching
- Low ON Resistance(Rdson≤15 mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test