CS35N10FA9 - Silicon N-Channel Power MOSFET

CR Micro

General Description

performance and enhance the avalanche energy.

suitable for use as a load switch and PWM applications.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤15 mΩ).
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.

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CS35N10FA9 silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CS35N10FA9
Manufacturer	CR Micro
File Size	1.13 MB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS35N10FA9 Datasheet

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Full PDF Text Transcription (Reference)

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Silicon N-Channel Power MOSFET ○R CS35N10F A9 General Description： CS35N10F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-220F, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤15 mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 100 V 35 A 36.