CS3N20A23H Overview
Description
： VDSS 200 CS3N20 A23H, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 2.5 which reduce the conduction loss, improve switching RDS(ON)Typ 1.2 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
