Click to expand full text
Silicon N-Channel Power MOSFET
○R
CS3N30 B23H
General Description：
VDSS
300
V
CS3N30 B23H, the silicon N-channel Enhanced ID
3
A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
2.5
W
which reduce the conduction loss, improve switching
RDS(ON)TYP
2.2
Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
SOT-223, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤3Ω) l Low Gate Charge (Typical Data:4.2nC) l Low Reverse transfer capacitances(Typical:4.8pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of LCD Power and adapter.
CS3N30B23H Datasheet
