CS3N80A4RZ-G
Description
： CS3N80 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤4.8Ω)
- Low Gate Charge (Typical Data: 17.3nC)
- Low Reverse transfer capacitances(Typical: 4.3pF)
- 100% Single Pulse avalanche energy Test
- Halogen Free
